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Room temperature tunable visible-light emission from Eu-doped SiOC thin films.

Franzò G., Bellocchi G., Miritello M, Iacona F.
  Mercoledì 13/09   09:00 - 13:00   Aula A107   II - Fisica della materia
In recent years, rare-earths (REs) doped inorganic materials have been widely applied in lighting, display devices and photonics. Among the different REs, a particular interest has been devoted to Eu since the emission of $Eu^{2}^{+}$ is quite strong and consists of a broad peak in the 400--600 nm range. In this work the optical properties of Eu-doped SiOC thin films have been investigated by photoluminescence (PL) measurements. A very bright $Eu^{2}^{+}$ light emission in the 400--600 nm range has been obtained by properly changing the Eu concentration in the films. In addition, bilayers consisting of two SiOC films doped with different Eu concentrations show an intense PL white emission. Furthermore, cathodoluminescence (CL) measurements have demonstrated that by properly varying the electron beam energy it is possible to control at the nanoscale the electron penetration depth inside the bilayer, thus obtaining a depth-resolved CL, with a continuous tuning of the emission from 400 to 600 nm. The very efficient PL and CL signals and the compatibility with Si technology open the way to new and promising applications of Eu-doped SiOC in lighting, display technology and photonics.