Irradiation effects on Random Telegraph Signal in Single-Photon Avalanche Diodes (SPADs).

Campajola M., Di Capua F.
  Giovedì 14/09   09:00 - 11:30   Aula A222   VI - Fisica applicata, acceleratori e beni culturali
Single-Photon Avalanche Diodes CMOS based devices are very attractive solutions for photon detection due to excellent timing resolution achievable and additional pixel circuitry capability for signal processing. Despite these advantages, high doping levels typical of CMOS processes increase the noise level. In this work, we investigate noise performances for different structures irradiated by protons, in view of applications requiring rad-hard device (PET, Space, HEP experiments. We observed Dark Count Rate (DCR) increase and Random Telegraph Signal effects: discrete switching of DCR between two or more values. We compare the results with the most accurate models proposed in the literature.