Research and development of a new high-radiation--tolerant pixel silicon detector for the high-luminosity phase of the CMS experiment at LHC.
The talk will report on the INFN research activity within the CMS experiment, in collaboration with Fondazione Bruno Kessler, aiming at the development of new thin, n-in-p type, silicon pixel sensors for the high-luminosity upgrade of the LHC. Prototypes of both planar and 3D sensors, with 100 $\mu$m and 130 $\mu$m active thickness, bump bonded to the present CMS readout chip, have been produced. The talk includes a description of the sensor design and fabrication technology. Preliminary results of their performance on test beam, before and after irradiation, will be presented.