Comunicazione

Research and development of a new high-radiation--tolerant pixel silicon detector for the high-luminosity phase of the CMS experiment at LHC.

Zuolo D.
  Venerdì 15/09   09:00 - 12:00   Aula A208   I - Fisica nucleare e subnucleare
The talk will report on the INFN research activity within the CMS experiment, in collaboration with Fondazione Bruno Kessler, aiming at the development of new thin, n-in-p type, silicon pixel sensors for the high-luminosity upgrade of the LHC. Prototypes of both planar and 3D sensors, with 100 $\mu$m and 130 $\mu$m active thickness, bump bonded to the present CMS readout chip, have been produced. The talk includes a description of the sensor design and fabrication technology. Preliminary results of their performance on test beam, before and after irradiation, will be presented.